osnaDocs: Phase formation and dopant redistribution in thin silicide layer stacks

Phase formation and dopant redistribution in thin silicide layer stacks

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https://osnadocs.ub.uni-osnabrueck.de/handle/urn:nbn:de:gbv:700-2016021014232

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DC Element	Wert	Sprache
dc.contributor.advisor	Prof. Dr. Joachim Wollschläger
dc.creator	Ogiewa, Kirsten
dc.date.accessioned	2016-02-10T13:59:51Z
dc.date.available	2016-02-10T13:59:51Z
dc.date.issued	2016-02-10T13:59:51Z
dc.identifier.uri	https://osnadocs.ub.uni-osnabrueck.de/handle/urn:nbn:de:gbv:700-2016021014232	-
dc.description.abstract	In the present work atom probe tomography (APT) was applied to analyze thin films used in semiconductor industry to investigate the capability of atom probe tomography as well as the dopant redistribution in thin silicide layer stacks. Different titanium silicide layer stacks are investigated and titanium diboride precipitates are identified by APT. Arsenic grain boundary segregation is verified by APT in cobalt silicide layer stacks. Furthermore APT measurements are compared to commonly used methods such as TEM and SIMS and found in good agreement. Each method exhibits its own advantages depending on the sample and the question. Atom probe tomography offers some unique features enabling three-dimensional analysis on the nanometer scale as shown on the mentioned thin film layer stacks.	eng
dc.subject	atom probe tomography	eng
dc.subject	thin films	eng
dc.subject	silicide	eng
dc.subject.ddc	530 - Physik
dc.title	Phase formation and dopant redistribution in thin silicide layer stacks	eng
dc.type	Dissertation oder Habilitation [doctoralThesis]	-
thesis.location	Osnabrück	-
thesis.institution	Universität	-
thesis.type	Dissertation [thesis.doctoral]	-
thesis.date	2015-09-25	-
dc.contributor.referee	Prof. Dr. Steffen Teichert
vCard.ORG	FB4
Enthalten in den Sammlungen:	FB06 - E-Dissertationen

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Datei	Beschreibung	Größe	Format
thesis_ogiewa.pdf	Präsentationsformat	41,11 MB	Adobe PDF	thesis_ogiewa.pdf Öffnen/Anzeigen

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